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| NTE108 Silicon NPN Transistor High Frequency Amplifier Description: The NTE108 is a silicon NPN transistor in a TO92 type case designed for low-noise, high-frequency amplifiers, 1GHz local oscillatore, non-neutralized IF amplifiers, and non-saturating circuits with rise and fall times less than 2.5ns. Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +83.3C/W Thermal Resistance, Junction-to-Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . +200C/W Note 1. RJA is measured with the device soldered into a typical printed circuit board. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current V(BR)CEO IC = 3mA, IB = 0, Note 2 V(BR)CBO IC = 1A, IE = 0 V(BR)EBO IE = 10A, IC = 0 ICBO VCB = 15V, IE = 0 15 30 3 - - - - - - - - 10 V V V nA Symbol Test Conditions Min Typ Max Unit Note 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 1%. Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter ON Characteristics DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Small-Signal Characteristics Current Gain-Bandwidth Product Output Capacitance Input Capacitance Noise Figure Functional Test Common-Emitter Amplifier Power Gain Power Output Oscillator Collector Efficiency Gpe Pout IC = 6mA, VCB = 12V, f = 200MHz (Gfd + Gre < -20dB) IC = 8mA, VCB = 15V, f = 500MHz IC = 8mA, VCB = 15V, Pout = 30mW, f = 500MHz 15 30 25 - - - - - - dB mW % fT Cobo Cibo NF IC = 4mA, VCE = 10V, f = 100MHz, Note 2 VCB = 0V, IE = 0, f = 140kHz VCB = 10V, IE = 0, f = 140kHz VEB = 0.5V, IC = 0, f = 140kHz IC = 1mA, VCE = 6V, RS = 400, f = 60MHz 600 - - - - - - - - - - 3.0 1.7 2.0 6 MHz pF pF pF dB hFE VCE(sat) VBE(sat) IC = 3mA, VCE = 1V, Note 2 IC = 8mA, VCE = 10V, Note 2 IC = 10mA, IB = 1mA IC = 10mA, IB = 1mA 20 20 - - - - - - - 200 0.4 1.0 V V Symbol Test Conditions Min Typ Max Unit Note 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 1%. .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .021 (.445) Dia Max EBC .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max |
Price & Availability of NTE108
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